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Magazine Name : Ieee Transactions On Electron Devices

Year : 2003 Volume number : 50 Issue: 10

Electron Mobility In An Algan/Gan Two-Dimensional Electron Gas I---Carrier Concentration Dependent Mobility (Article)
Subject: Mobility , Hfet
Author: Oded Katz      Adi Horn      G Bahir     
page:      2002 - 2008
Channel Thickness Dependence Of Breakdown Dynamic In Inp-Based Lattice-Matched Hemts (Article)
Subject: Breakdown , Monte Carlo
Author: Ammar Sleiman      Aldo Di Carlo      Paolo Lugli     
page:      2009 - 2014
A Study On Current Collapse In Algan/Gan Hemts Induced By Bias Stress (Article)
Subject: Surface State , Bias Stress
Author: Takashi Mizutani      Yutaka Ohno      Koichi Maezawa     
page:      2015 - 2020
Temperature Dependence Of Breakdown And Avalanche Multiplication In In0.53 Ga0.47 As Diodes And Heterojunction Bipolar Transistors (Article)
Subject: Heterojunction Bipolar Transistors
Author: M Yee      W K Ng      J P R David     
page:      2021 - 2026
Temperature Dependence Of Impact Ionization In Gaas (Article)
Subject: Ionization Coefficients , Avalanche Diodes
Author: C Groves      R Ghin      J P R David     
page:      2027 - 2031
Characterization Of The Frequency Dispersion Of Transconductance And Drain Conductance Of Gaas Mesfet (Article)
Subject: Transconductance , Gaas
Author: Yumiko Hasumi      Hiroshi Kodera      Tsutomu Oshima     
page:      2032 - 2038
Sea Of Leads (Sol) Ultrahigh Density Wafer-Level Chip Input/Output Interconnections For Gigascale Integration (Article)
Subject: Air Gaps , Interconnections
Author: Muhannad S Bakir      Hollie A Reed      Paul A Kohl     
page:      2039 - 2048
Analysis And Simulation Of A Mid-Infrared P+-Inas0.55 Sb0.15 P0.30/N-Inas0.89 Sb0.11/N+ Inas0.55 Sb0.15 P0.30 Double Heterojunction Photodetector Grown By Lpe (Article)
Subject: Tunneling , Double Heterostructure
Author: P Chakrabarti      A Krier      A F Morgan     
page:      2049 - 2058
Correlation Image Sensor: Two-Dimensional Matched Detection Of Amplitude-Modulated Light (Article)
Subject: Cmos , Image Sensor
Author: Shigeru Ando      Akira Kimachi     
page:      2059 - 2066
Theoretical And Experimental Investigation Of Si Nanocrystal Memory Device With Hfo2 High-K Tunneling Dielectric (Article)
Subject: Data Retention , Hfo2
Author: Jong Jin Lee      Xuguang Wang      Nan Lu     
page:      2067 - 2072
Impact Of Theree-Dimensional Transistor On The Pattern Area Reduction For Ulsi (Article)
Subject: Double-Gate Mosfet
Author: Shigeyoshi Watanabe     
page:      2073 - 2080
Low Thermal-Budget Process Of Sputtered-Pzt Capacitor Over Multilvel Metallization (Article)
Subject: Feram , Ferroelectric Memories
Author: Naoya Inoue     
page:      2081 - 2087
Formation Of Hafnium-Aluminum-Oxide Gate Dielectric Using Single Cocktail Liquid Source In Mocvd Process (Article)
Subject: Hafnium Aluminate
Author: Moon Sig Joo     
page:      2088 - 2094
Scaling Fully Depleted Soi Cmos (Article)
Subject: Energy Quantization
Author: Vishal P Trivedi     
page:      2095 - 2103
Chisel Programming Operation Of Scaled Nor Flash Eeproms-Effect Of Voltage Scaling, Device Scaling And Technological Parameters (Article)
Subject: Channel Hot Electron (Che)
Author: Nihar R Mohapatra     
page:      2104 - 2111
Extraction Of The Capacitance Of Ultrathin High-K Gate Dielectrics (Article)
Subject: Capacitance Measurement
Author: Samares Kar     
page:      2112 - 2119
Manufacturing Enhancements For Cosi2 Self-Aligned Silicide At The 0.12-Um Cmos Technology Node (Article)
Subject: Cmos Technology
Author: Yuanning Chen     
page:      2120 - 2125
Esd Implantation For Subquarter-Micron Cmos Technology To Enhance Esd Robustness (Article)
Subject: Electrostatic Discharge (Esd)
Author: Ming-Dou Ker     
page:      2126 - 2134